铝诱导结晶制备多晶硅薄膜

Int. J. Comput. Eng. Sci. Pub Date : 2003-09-01 DOI:10.1142/S1465876303001642

X. Zeng, J. Li, X. Sun, G. Qi, X. Zeng

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引用次数: 0

摘要

本研究是一种制备多晶硅薄膜的新方法。铝诱导的a-Si薄膜的结晶仅在400℃左右的温度下进行了热退火。实验结果表明，Al在a-Si层上的强化结晶效果比Al在a-Si层下的强化结晶效果更明显，制备的多晶硅薄膜具有更优的(400)晶向。验证了铝能引起a-Si膜的横向结晶。横向结晶样品未发现择优取向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Polycrystalline Silicon Thin Film Obtained By Aluminum Induced Crystallization

This study is on a new approach for fabrication of poly-Si thin films. Aluminum-induced crystallization of a-Si film has been achieved by thermal annealing only at around 400 °C. The Experimental results reveal that the Al on top of a-Si arrangement has more evident effect in crystallization enhancement than that with Al under a-Si, and the resultant poly-Si films show preferred (400) crystal orientation. It is verified that aluminum can cause lateral crystallization of a-Si film. No preferred orientation was noticed from lateral crystallization samples.

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Int. J. Comput. Eng. Sci.

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