基于失配补偿和随机噪声增强的0.186 pj / Bit锁存真随机数发生器

Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, F. Yang, Kunyang Liu, H. Shinohara
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引用次数: 6

摘要

提出了一种基于校准和反馈无控制锁存的真随机数发生器(TRNG)。它具有失配自补偿和随机噪声增强技术,大大提高了噪声与失配比。通过使用4位熵源的异或函数,该TRNG可以在宽电压(0.3~1.0 V)和温度(- 20~100°C)范围内有效地工作。采用8位冯·诺伊曼等待后处理技术(VN8W)提取全熵比特流,并通过NIST-SP 800-22随机测试验证。同时还证明了该方法对电源噪声注入攻击的鲁棒性。所提出的TRNG采用130纳米CMOS技术制造,在0.3 V下实现了0.186 pJ/bit的最新能量,核心面积为661 um2 (0.039 MF2)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement
A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3~1.0 V) and temperature (−20~100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).
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