Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, F. Yang, Kunyang Liu, H. Shinohara
{"title":"基于失配补偿和随机噪声增强的0.186 pj / Bit锁存真随机数发生器","authors":"Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, F. Yang, Kunyang Liu, H. Shinohara","doi":"10.23919/VLSICircuits52068.2021.9492474","DOIUrl":null,"url":null,"abstract":"A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3~1.0 V) and temperature (−20~100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"63 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement\",\"authors\":\"Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, F. Yang, Kunyang Liu, H. Shinohara\",\"doi\":\"10.23919/VLSICircuits52068.2021.9492474\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3~1.0 V) and temperature (−20~100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).\",\"PeriodicalId\":106356,\"journal\":{\"name\":\"2021 Symposium on VLSI Circuits\",\"volume\":\"63 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSICircuits52068.2021.9492474\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSICircuits52068.2021.9492474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement
A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3~1.0 V) and temperature (−20~100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).