JUICE任务中电子诱发SEE的风险评估

N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo
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引用次数: 4

摘要

实验证明了电子器件对高能电子的SEE灵敏度。几项地面实验表明,电子诱导的SEE可以在最近的技术中实现。在JUICE任务中,预期的电子环境比地球轨道更为恶劣。在这项工作中评估了这种电子通量对嵌入式电子器件的影响。研究的重点是SRAM存储器的SEU敏感性。在电子、质子和重离子下测试了三种不同的设备参考。更详细地研究了电子和低能质子直接电离对总SEU速率的贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Risk Assessment of Electron Induced SEE during the JUICE Mission
The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.
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