{"title":"GHz硅片探测校准方法","authors":"A. Fraser, R. Gleason, E. Strid","doi":"10.1109/BIPOL.1988.51067","DOIUrl":null,"url":null,"abstract":"Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"GHz on-silicon-wafer probing calibration methods\",\"authors\":\"A. Fraser, R. Gleason, E. Strid\",\"doi\":\"10.1109/BIPOL.1988.51067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51067\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented.<>
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