零中频第二谐波SiGe混频器与直流偏移抵消

U. Guvenc, O. Palamutçuogullari, B. Yarman
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引用次数: 3

摘要

在这项工作中,提出了一种新的SiGe混合器电路拓扑结构,该拓扑结构采用二次谐波泵浦混合技术。所提出的电路是为在前端使用零中频混频器的集成电路接收机而开发的。对电路进行了分析,探讨了二次谐波泵送混合的适宜运行条件。该拓扑结构非常适合于宽带应用,并且具有独特的机制来防止LO到RF泄漏,从而导致输出端的直流偏移。仿真结果表明,在2 ~ 12 GHz射频范围内,转换电压增益达到21dB,而输出直流电压分量比中频分量低80dB以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Zero-if second harmonic SiGe mixer with DC offset cancellation
In this work, a new SiGe mixer circuit topology operating with the second harmonically pumped mixing technique is proposed. The proposed circuit is developed for to be used in IC receivers which use Zero-IF mixers at their front ends. The Analysis of the circuit is performed and the appropriate operation conditions for second harmonically pumped mixing are investigated. The topology is quite suitable for the wide band applications and has a unique mechanism to prevent the LO to RF leakage which results in DC offset at the output. Simulations are performed and according to the simulation results, 21dB of conversion voltage gain is obtained within 2-12 GHz RF range while the DC voltage component at the output stays more than 80dB below the IF component.
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