包含分布栅极效应的HEMT广义等效电路模型

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492079

Marcin Góralczyk

{"title":"包含分布栅极效应的HEMT广义等效电路模型","authors":"Marcin Góralczyk","doi":"10.1109/MIKON.2016.7492079","DOIUrl":null,"url":null,"abstract":"A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by [Z] matrix, therefore it can be applied to any structure that has similar distributed nature.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Generalized equivalent circuit model of HEMT including distributed gate effects\",\"authors\":\"Marcin Góralczyk\",\"doi\":\"10.1109/MIKON.2016.7492079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by [Z] matrix, therefore it can be applied to any structure that has similar distributed nature.\",\"PeriodicalId\":354299,\"journal\":{\"name\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2016.7492079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2016.7492079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一个包含高电子迁移率晶体管(hemt)分布栅极效应的模型。导出了用[Z]矩阵描述的一般结构的等效门阻抗表达式，因此可以应用于任何具有类似分布性质的结构。

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Generalized equivalent circuit model of HEMT including distributed gate effects

A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by [Z] matrix, therefore it can be applied to any structure that has similar distributed nature.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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