场致发射显示器不同结构驱动性能的研究

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354915

Zhang Yuning, Lei Wei, Zhang Xiaobing, Liu Ao, Zong Geng, M. Xiaoyan, W. Qilong

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引用次数: 0

摘要

本文通过数值分析，提出了几种最优场发射显示器元件，以改善二极管结构、正栅极结构和栅极下结构等不同结构器件的发射性能、降低驱动电压和其他驱动性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of the driving performances with different structures of field emission displays

In this paper, some optimum field emission displays (FEDs) elements are proposed using numerical analyses to improve the emission performances, to decrease the driving voltage and to improve other driving performances of these devices with different structures like diode structure, normal-gate structure, and under-gate structure.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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