工艺变化对数字CMOS温度传感器精度的影响

Wanghui Zou, Yu Wei, Junlong Tang
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摘要

本文讨论了工艺变化对基于0.35um CMOS工艺设计的数字智能温度传感器精度的影响,该传感器不采用任何校准技术。结果表明,如果传感器电路设计合理,在$-40^{\circ}\mathrm{C} $和$ 120^{\circ}\mathrm{C}$温度范围内,MOS晶体管的工艺变化对传感器精度影响不大,而片上双极结晶体管和电阻的工艺变化会产生较大的误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of Process Variation on the Accuracy of Digital CMOS Temperature Sensor
This paper discusses the impact of process variation on the accuracy of a digital smart temperature sensor which we designed based on a 0.35um CMOS process without employing any calibration techniques. It’s found that, if the sensor circuit is properly designed, the process variation of MOS transistors has little impact on sensor accuracy in a temperature range of $-40^{\circ}\mathrm{C} \sim 120^{\circ}\mathrm{C}$, whereas the process variation of on-chip bipolar junction transistors and resistors produce considerable errors.
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