{"title":"一种用于检测90 nm SiGe BiCMOS皮秒脉冲的非线性脉冲采样器","authors":"Himanshu Aggrawal, A. Babakhani","doi":"10.23919/EUMIC.2017.8230662","DOIUrl":null,"url":null,"abstract":"In this paper, a novel nonlinear impulse sampler is presented. The architecture uses an ultrafast transmissionline based inductive peaking technique to turn on a high-speed sampling bipolar transistor for a few picoseconds. It is shown that the sampler can detect impulses as short as 100 ps. The chip is fabricated in IBM 9HP BiCMOS process technology and occupies an area of 1.02 mm2. The power consumption of the chip is 105 mW.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A nonlinear impulse sampler for detection of picosecond pulses in 90 nm SiGe BiCMOS\",\"authors\":\"Himanshu Aggrawal, A. Babakhani\",\"doi\":\"10.23919/EUMIC.2017.8230662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel nonlinear impulse sampler is presented. The architecture uses an ultrafast transmissionline based inductive peaking technique to turn on a high-speed sampling bipolar transistor for a few picoseconds. It is shown that the sampler can detect impulses as short as 100 ps. The chip is fabricated in IBM 9HP BiCMOS process technology and occupies an area of 1.02 mm2. The power consumption of the chip is 105 mW.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A nonlinear impulse sampler for detection of picosecond pulses in 90 nm SiGe BiCMOS
In this paper, a novel nonlinear impulse sampler is presented. The architecture uses an ultrafast transmissionline based inductive peaking technique to turn on a high-speed sampling bipolar transistor for a few picoseconds. It is shown that the sampler can detect impulses as short as 100 ps. The chip is fabricated in IBM 9HP BiCMOS process technology and occupies an area of 1.02 mm2. The power consumption of the chip is 105 mW.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
