MEMS执行器中厚PZT层的高速溅射

19th IEEE International Conference on Micro Electro Mechanical Systems Pub Date : 2006-05-08 DOI:10.1109/MEMSYS.2006.1627774

H. Jacobsen, H. Quenzer, B. Wagner, K. Ortner, T. Jung

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引用次数: 5

摘要

采用高速气相溅射工艺在硅衬底上制备了厚度为3 ~ 16 μ m的PZT薄膜。气流溅射利用空心阴极效应，导致高沉积速率约200 nm/min至250 nm/min。

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High-Rate Sputtering of Thick PZT Layers for MEMS Actuators

Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.

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来源期刊

19th IEEE International Conference on Micro Electro Mechanical Systems

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