{"title":"一种用于电压控制PIN二极管衰减器的增强PIN二极管模型","authors":"Byung-Jun Jang, I. Yom, S. Lee","doi":"10.1109/EUMA.2003.340932","DOIUrl":null,"url":null,"abstract":"This paper presents an enhanced PIN diode model for the voltage-controlled PIN diode attenuator. The proposed model operates well when it is used in the voltage-controlled mode as well as current-controlled mode, and it is a simple and straightforward model, since the PN junction diode of this model has the same I-V curve as that of the PIN diode. The validity of the proposed model is demonstrated by the measured data.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"An Enhanced PIN Diode Model for Voltage-Controlled PIN Diode Attenuator\",\"authors\":\"Byung-Jun Jang, I. Yom, S. Lee\",\"doi\":\"10.1109/EUMA.2003.340932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an enhanced PIN diode model for the voltage-controlled PIN diode attenuator. The proposed model operates well when it is used in the voltage-controlled mode as well as current-controlled mode, and it is a simple and straightforward model, since the PN junction diode of this model has the same I-V curve as that of the PIN diode. The validity of the proposed model is demonstrated by the measured data.\",\"PeriodicalId\":156210,\"journal\":{\"name\":\"2003 33rd European Microwave Conference, 2003\",\"volume\":\"125 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 33rd European Microwave Conference, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.2003.340932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.340932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Enhanced PIN Diode Model for Voltage-Controlled PIN Diode Attenuator
This paper presents an enhanced PIN diode model for the voltage-controlled PIN diode attenuator. The proposed model operates well when it is used in the voltage-controlled mode as well as current-controlled mode, and it is a simple and straightforward model, since the PN junction diode of this model has the same I-V curve as that of the PIN diode. The validity of the proposed model is demonstrated by the measured data.