退化准弹道纳米mosfet中平均自由程和kT层的多亚带蒙特卡罗研究

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346940

P. Palestri, R. Clerc, D. Esseni, L. Lucci, L. Selmi

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引用次数: 25

摘要

本文通过多亚带蒙特卡罗(MSMC)模拟，研究了纳米mosfet中众所周知的紧致背散射公式的预测，分析了载流子简并和复杂散射机制对背散射的影响。本文还讨论了适当的平均自由程的定义及其与低场迁移率的关系

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs

This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility

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2006 International Electron Devices Meeting

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