超大层次存储器结构的优雅容量退化

C. Morganti, T. Chen
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引用次数: 0

摘要

提出了一种在大容量分层存储器中实现优雅容量退化的设计方案。先前的研究提供了一种测试和修复记忆块的方法。如果存在过多的故障,则块可能无法完全修复。当与测试和修复结构相结合时,该方案将允许内存容量优雅地降级,即内存仍将以较低的总容量运行。采用0.8 /spl mu/m CMOS工艺技术对该方案进行了实现和仿真。初步结果表明,面积开销相对较小,最佳修复时间为2.5 ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graceful capacity degradation for ultra-large hierarchical memory structures
A design for implementing graceful capacity degradation in large capacity hierarchical memories is presented. Previous research provided a means for testing and repairing blocks of memory. In the presence of an excessive number of faults, blocks may not be fully repairable. When coupled with the test and repair structure, this scheme will allow the memory capacity to degrade gracefully, i.e., the memory will still operate with a lower total capacity. The scheme was implemented and simulated using a 0.8 /spl mu/m CMOS process technology. Initial results show relatively small area overhead with a repair time of 2.5 ns best case.
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