D. Gryglewski, D. Rosołowski, W. Wojtasiak, Marcin Góralczyk, W. Gwarek
{"title":"一种用于AESA的10W GaN x波段收发模块","authors":"D. Gryglewski, D. Rosołowski, W. Wojtasiak, Marcin Góralczyk, W. Gwarek","doi":"10.1109/MIKON.2016.7491978","DOIUrl":null,"url":null,"abstract":"The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10 GHz. GaAs technology core chip is applied and it is used to drive power amplifiers based on GaN technology. The shape of the module enclosure follows the requirements of limited space available in an X-band AESA.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"481 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 10W GaN based X-band T/R module for AESA\",\"authors\":\"D. Gryglewski, D. Rosołowski, W. Wojtasiak, Marcin Góralczyk, W. Gwarek\",\"doi\":\"10.1109/MIKON.2016.7491978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10 GHz. GaAs technology core chip is applied and it is used to drive power amplifiers based on GaN technology. The shape of the module enclosure follows the requirements of limited space available in an X-band AESA.\",\"PeriodicalId\":354299,\"journal\":{\"name\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"volume\":\"481 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2016.7491978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2016.7491978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10 GHz. GaAs technology core chip is applied and it is used to drive power amplifiers based on GaN technology. The shape of the module enclosure follows the requirements of limited space available in an X-band AESA.