{"title":"比较DC-HEMT和HEMT的噪声特性","authors":"S. Sadeghi, M. Vadizadeh, R. Faez","doi":"10.1109/IRANIANCEE.2013.6599546","DOIUrl":null,"url":null,"abstract":"We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.","PeriodicalId":383315,"journal":{"name":"2013 21st Iranian Conference on Electrical Engineering (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Compare noise characteristic of DC-HEMT and HEMT\",\"authors\":\"S. Sadeghi, M. Vadizadeh, R. Faez\",\"doi\":\"10.1109/IRANIANCEE.2013.6599546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.\",\"PeriodicalId\":383315,\"journal\":{\"name\":\"2013 21st Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 21st Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2013.6599546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 21st Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2013.6599546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.
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