太赫兹乘法器背靠背连接边缘二极管的研制

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961616

V. Shashkin, V. Vaks, E. A. Vopilkin, V.M. Daniltsev, A. Klimov, M.I. Kuznetsov, A.V. Murel, V. V. Rogov, O. Khrykin

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引用次数: 0

摘要

本文提出了一种在半绝缘GaAs衬底上制造具有边缘(非平面)肖特基接触外延层(或异质层)背靠背连接二极管的技术。在此基础上提出了太赫兹倍频器的概念。给出了结构设计、测试测量和实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of back-to-back connected edge diodes for THz multipliers

A technology for fabrication of back-to-back connected diodes with edge (nonplanar) Schottky contacts to epitaxial layer (or heterolayers) on semi-insulating GaAs substrate has been developed. A concept of THz frequency multipliers on their basis has been formulated. The results of the structure design, test measurements and experiments are presented.

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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