从电路电压和延迟时间评价BiCMOS

M. Fujishima, K. Asada, T. Sugano
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引用次数: 3

摘要

作者从(1)无寄生电容的基本延迟、(2)有寄生电容的实际延迟、(3)全摆幅(从电源到地)模式工作和(4)部分摆幅工作的角度对三种BiCMOS逻辑电路的电压相关速度退化进行了一般评价。对三种电路的基本延时时间进行了解析推导,并讨论了寄生电容的影响。延迟时间的退化很大程度上取决于输入信号是完全振荡还是部分振荡。对于部分摆幅工作,已经发现带有偏置二极管的发射极跟随电路是有效的。一般来说,全摆幅操作可以通过插入电阻来实现
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Appraisal of BiCMOS from circuit voltage and delay time
The authors present a general appraisal of voltage-dependent speed degradation for three kinds of BiCMOS logic circuits from the viewpoints of (1) essential delays without parasitic capacitances, (2) practical delays with parasitics, (3) full-swing (power to ground) mode operation, and (4) partial-swing operation. The essential delay times of the three circuits are analytically derived and effects of parasitic capacitances are discussed. The degradation of delay time is shown to depend significantly on whether the input signal swings fully or partially. For partial-swing operation, it has been found that an emitter follower circuit with bias diodes is effective. In general, full-swing operation can be achieved by inserting resistors
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