5nm CMOS中高性能计算平台的5GHz SRAM

R. Mathur, M. Kumar, V. Asthana, S. Aggarwal, S. Gupta, D. Wanjul, A. Baradia, S. Thota, P. Jain, B. Zheng, A. Cubeta, S. Thyagarajan, A. Chen, Y. Chong
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引用次数: 0

摘要

7nm和5nm硅制程节点的进步将高性能计算(HPC)推向了技术能力和前所未有的性能水平的新时代。本文展示了针对基础设施市场的旗舰HPC平台核心的SRAM宏的开发(图1)。5nm FinFET工艺的测试车辆显示L1 SRAM宏频率为5GHz,访问时间低于120ps, L2 SRAM宏的高比特密度为33.20 Mbit/mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
5GHz SRAM for High-Performance Compute Platform in 5nm CMOS
Advances in 7nm and 5nm silicon process nodes push high-performance compute (HPC) to a new era of technological capabilities and unprecedented performance levels. This paper showcases the development of SRAM macros for a flagship HPC platform core targeted towards the infrastructure market (figure 1). A test vehicle in the 5nm FinFET process demonstrates L1 SRAM macro frequency of 5GHz with sub-120ps access times and a high bit density of L2 SRAM macro of 33.20 Mbit/mm2.
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