VGF生长制备低缺陷InP衬底晶体的研究进展

G. Muller, D. Hofmann, N. Schafer
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引用次数: 3

摘要

综述了液态封装式生长工艺和垂直梯度冻结法生长InP衬底晶体的研究现状。讨论了目前限制VGF潜力的孪生问题,并考虑了克服这一缺陷的策略。介绍了一种新型VGF多区炉。基于最近开发的全局数值模型,在该装置中在定义的热和本构边界条件下加工VGF,为低缺陷InP单晶的生长提供了新的视角
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Perspectives of the VGF growth process for the preparation of low-defect InP substrate crystals
The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals.<>
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