利用电荷和通量对ReRAM测量特性进行经验建模

2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) Pub Date : 2022-06-08 DOI:10.1109/mocast54814.2022.9837658

M. M. A. Chawa, Carol de Benito, H. Castán, S. Dueñas, S. Stavrinides, R. Tetzlaff, R. Picos

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引用次数: 0

摘要

本文提出了一个基于电荷与磁通纯关系的经验模型(即理想忆阻器)，以拟合磁通电荷域的ReRAM器件的实验数据。该模型能够以非常高的精度捕获行为，包括电导的行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux

In this work, an empirical model based on a pure relation between charge and flux (aka an ideal memristor) has been proposed to fit the experimental data for ReRAM devices in flux charge domain. The model is able to capture the behavior with a very good accuracy, including also the behavior of the memconductance.

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2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)

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