Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng
{"title":"基于斩波稳定技术的高精度带隙电压产生方法","authors":"Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng","doi":"10.1109/EDSSC.2019.8754018","DOIUrl":null,"url":null,"abstract":"A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-Precision Bandgap Voltage Generation Method With Chopper Stabilization Technique\",\"authors\":\"Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng\",\"doi\":\"10.1109/EDSSC.2019.8754018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.\",\"PeriodicalId\":183887,\"journal\":{\"name\":\"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2019.8754018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8754018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Precision Bandgap Voltage Generation Method With Chopper Stabilization Technique
A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.