从我们大脑中的记忆到神经形态系统中出现的抵抗记忆

B. Desalvo, E. Vianello, D. Garbin, O. Bichler, L. Perniola
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引用次数: 11

摘要

在这项工作中,我们将重点关注新的非易失性电阻式存储技术(如OxRAM和CBRAM)在新兴应用领域(如神经形态电路)中的作用,以节省能源和提高性能。我们将提出基于ReRAM的大规模能量高效神经形态系统作为随机二元突触。原型应用,如复杂的视觉和听觉模式提取将讨论使用前馈脉冲神经网络。这些系统和人类记忆之间的平行关系将被绘制出来,因为最近关于人类大脑和认知过程的发现可能会带来好处,并为智能数据处理开辟新的视角。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
From Memory in our Brain to Emerging Resistive Memories in Neuromorphic Systems
In this work, we will focus on the role that new nonvolatile resistive memory technologies (as OxRAM and CBRAM) can play in emerging fields of application, such as neuromorphic circuits, to save energy and increase performance. We will present large-scale energy efficient neuromorphic systems based on ReRAM as stochastic-binary synapses. Prototype applications such as complex visual- and auditory-pattern extraction will be discussed using feedforward spiking neural networks. A parallel will be drawn between these systems and human memory, as recent discoveries on the human brain and cognitive processes may bring benefits and open new perspectives for intelligent data processing.
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