x射线和中子孔隙度测定法是测定多孔低钾薄膜结构特征的有力方法

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345718

Hae-Jeong Lee, B. Vogt, C. Soles, Da-Wei Liu, B. Bauer, Wen-Li Wu, E. Lin, Gwi-Gwon Kang, M. Ko

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引用次数: 4

摘要

基于甲基硅氧烷的多孔低k介电膜具有不同的孔隙载荷，通过x射线和神经元孔隙率测定来确定其孔径分布、平均密度、壁密度、孔隙率、密度剖面和孔隙率剖面。含孔隙率为45%的样品孔隙率为52%，平均孔径为23 /spl Aring/ in半径。孔隙大小与小角中子散射测量结果一致。壁密度与孔隙素含量无关，孔隙素对孔隙的生成是100%有效的。

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X-ray and neutron porosimetry as powerful methodologies for determining structural characteristics of porous low-k thin films

Methylsilsesquioxane based porous low-k dielectric films with varying porogen loading have been characterized using X-ray and neuron porosimetry to determine their pore size distribution, average density, wall density, porosity, density profiles, and porosity profiles. The porosity and the average pore size of the sample with 45% porogen were 52% and 23 /spl Aring/ in radius, respectively. Pore size, was consistent with that from small angle neutron scattering measurements. The wall density was found to be independent of the porogen content and it appeared that the porogen was 100% effective in generating pores.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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