微波晶体管[mesfet]的噪声波建模

2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099) Pub Date : 2000-05-29 DOI:10.1109/MELCON.2000.880414

N. Males-Ilic, V. Markovic, O. Pronic

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引用次数: 0

摘要

本文提出了一种基于波法的微波晶体管噪声建模新方法。根据三个等效噪声温度计算相关矩阵元素。噪声波源的强度和相关系数以图形形式表示为频率的函数，并进行了讨论。利用微波电路模拟器Libra，从计算得到的噪声波源确定晶体管的噪声参数。

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Noise wave modeling of microwave transistors [MESFETs]

This paper presents a new procedure for noise modeling of microwave transistors based on the wave approach. The correlation matrix elements are calculated in terms of three equivalent noise temperatures. The strength of noise wave sources and correlation coefficient are shown graphically as a function of frequency and discussed. Also, the transistor noise parameters are determined from calculated noise wave sources by using microwave circuit simulator Libra.

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2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)

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