用于低剂量数字放射照相的“智能”像素传感器阵列的设计、优化和评估

Kai Wang, Xinghui Liu, H. Ou, Jun Chen
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引用次数: 0

摘要

非晶硅(a-Si:H)薄膜晶体管(TFTs)已被广泛用于制造用于数字射线照相(DR)的平板x射线探测器。随着低剂量x射线成像需求的增长,一种具有高信噪比(SNR)像素结构的探测器应运而生。“智能”像素旨在使用双栅极光敏TFT进行传感,存储和开关。它与传统的无源像素传感器(PPS)和有源像素传感器(APS)的不同之处在于,所有这三种功能都被组合到一个设备中,而不是在一个像素中三个独立的单元。因此,期望具有高填充系数和高空间分辨率。此外,它利用双栅光敏TFT的放大效应,形成一个单晶体管APS,导致潜在的高信噪比。本文研究了用于低剂量dr的智能像素传感器和阵列的设计、优化和评估。我们将设计和优化从闪烁体到TFT级的智能像素,并通过4x4传感器阵列的光学和电学仿真和实验进行验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, optimization and evaluation of a “smart” pixel sensor array for low-dose digital radiography
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. “Smart” pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.
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