1220 nm (In,Ga)(As,P)/InP LED结构的MOVPE生长

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088502

R. Kúdela, M. Kučera, D. Gregušová, V. Cambel, J. Novák

{"title":"1220 nm (In,Ga)(As,P)/InP LED结构的MOVPE生长","authors":"R. Kúdela, M. Kučera, D. Gregušová, V. Cambel, J. Novák","doi":"10.1109/ASDAM.2002.1088502","DOIUrl":null,"url":null,"abstract":"In/sub 1-x/Ga/sub x/As/sub 1-y/P/sub y//InP layers and LED structures were prepared for the wavelength 1220 nm by LP MOVPE. Very high phosphine/arsine ratio (>100) was necessary to achieve desirable quaternary composition at the growth temperature of 650/spl deg/C. Very good surface morphology with the height of the growth steps of one monolayer was measured by AFM on the lattice matched layers. Significant shift of the photoluminescence spectra from p-type layers, contrary to n-type or undoped layers, was measured at 5 K. The electroluminescent spectrum from a quaternary LED measured at 300 K with a maximum at 1224.6 nm is shown.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"482 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE growth of 1220 nm (In,Ga)(As,P)/InP LED structures\",\"authors\":\"R. Kúdela, M. Kučera, D. Gregušová, V. Cambel, J. Novák\",\"doi\":\"10.1109/ASDAM.2002.1088502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In/sub 1-x/Ga/sub x/As/sub 1-y/P/sub y//InP layers and LED structures were prepared for the wavelength 1220 nm by LP MOVPE. Very high phosphine/arsine ratio (>100) was necessary to achieve desirable quaternary composition at the growth temperature of 650/spl deg/C. Very good surface morphology with the height of the growth steps of one monolayer was measured by AFM on the lattice matched layers. Significant shift of the photoluminescence spectra from p-type layers, contrary to n-type or undoped layers, was measured at 5 K. The electroluminescent spectrum from a quaternary LED measured at 300 K with a maximum at 1224.6 nm is shown.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"482 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用LP MOVPE制备了波长为1220nm的In/sub 1-x/Ga/sub x/As/sub 1-y/P/sub y/ InP层和LED结构。在650/spl℃的生长温度下，需要很高的磷化氢/胂比(>100)才能达到理想的季元组成。用原子力显微镜在晶格匹配层上观察到良好的表面形貌和单层生长台阶的高度。在5k时，p型层的光致发光光谱与n型层或未掺杂层的光致发光光谱发生了明显的变化。显示了在300 K下测量的四元LED的电致发光光谱，其最大值为1224.6 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

MOVPE growth of 1220 nm (In,Ga)(As,P)/InP LED structures

In/sub 1-x/Ga/sub x/As/sub 1-y/P/sub y//InP layers and LED structures were prepared for the wavelength 1220 nm by LP MOVPE. Very high phosphine/arsine ratio (>100) was necessary to achieve desirable quaternary composition at the growth temperature of 650/spl deg/C. Very good surface morphology with the height of the growth steps of one monolayer was measured by AFM on the lattice matched layers. Significant shift of the photoluminescence spectra from p-type layers, contrary to n-type or undoped layers, was measured at 5 K. The electroluminescent spectrum from a quaternary LED measured at 300 K with a maximum at 1224.6 nm is shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

自引率

0.00%

发文量