氮化镓纳米结构阴极谐振隧道二极管

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676530

N. Goncharuk, N. Karushkin

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引用次数: 0

摘要

在真空隧道二极管(RTD)模型的框架下，从理论上研究了两层AlxGa1-xN-GaN涂层GaN纳米阴极谐振隧道二极管(RTD)的微波特性。找出了阴极镀层的最佳参数，即二极管负电导带的上频率在亚毫米波长范围内。

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Resonant tunneling diode based on nitride gallium nanostructural cathode

Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer AlxGa1-xN-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper frequency of diode negative conductance band is in sub-millimeter range of wave length.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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