{"title":"GaN技术中同步双频高效谐波调谐功率放大器","authors":"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon","doi":"10.1109/EMICC.2007.4412664","DOIUrl":null,"url":null,"abstract":"In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology\",\"authors\":\"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon\",\"doi\":\"10.1109/EMICC.2007.4412664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.
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