1550nm左右硅纳米波导连续波参数增益的数值研究

Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI:10.1109/NUSOD.2014.6935383

G. Dziallas, Mahmoud Jazajerifar, A. Gajda, L. Zimmermann, K. Petermann

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引用次数: 1

摘要

我们建立了一个数值模型来研究嵌入PIN结的硅纳米波导中的连续波四波混频(FWM)。通过对实验数据的拟合，对模型进行了补充。利用该模型，我们表明，只要载流子寿命足够低(几十皮秒)，硅中的FWM增益可以补偿所有相关的损耗机制(双光子和自由载流子吸收以及线性损耗)。

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A numerical investigation of continuous wave parametric gain in silicon nano-waveguides at wavelengths around 1550 nm

We developed a numerical model to investigate continuous wave four wave mixing (FWM) in silicon nano-waveguides with embedded PIN junctions. The model is complemented by fitting to the experimental data. Using the model we show that the FWM gain in silicon can compensate for all relevant loss mechanisms (two photon and free carrier absorption as well as linear loss) provided that the carrier lifetime is low enough (few tens of picoseconds).

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Numerical Simulation of Optoelectronic Devices, 2014

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