支持3GPP新无线电FR2频段n258的ka波段4堆叠45nm CMOS SOI功率放大器

2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) Pub Date : 2019-11-10 DOI:10.1109/IMOC43827.2019.9317652

J. Aikio, Alok Sethi, Mikko Hietanen, T. Rahkonen, A. Pärssinen

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引用次数: 1

摘要

本文介绍了一种采用45nm CMOS SOI技术设计和制造的毫米波无线应用的全集成四叠功率放大器。工作频率为20GHz ~ 30GHz，最大增益为13.7 dB。在24GHz下，最大射频输出功率、功率附加效率和输出1dB压缩点分别为20.5 dBm、29%和18dBm。在平均信道功率为14.5 dBm时，使用100MHz 16-QAM 3GPP/NR OFDM信号在26GHz下测量EVM为12.5%。

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Ka-Band 4-Stack 45nm CMOS SOI Power Amplifier Supporting 3GPP New Radio FR2 band n258

This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The operation frequency is from 20GHz to 30GHz, with a maximum gain of 13.7 dB. Maximum RF output power, power-added eficiency and output 1dB compression point are 20.5 dBm, 29% and 18dBm, respectively, achieved at 24GHz. EVM of 12.5% was measured at average channel power of 14.5 dBm using 100MHz 16-QAM 3GPP/NR OFDM signal at 26GHz.

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2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

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