基于主方程的有机半导体器件直流、交流及噪声仿真

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-09-01 DOI:10.1109/SISPAD.2014.6931582

C. Jungemann, C. Zimmermann

{"title":"基于主方程的有机半导体器件直流、交流及噪声仿真","authors":"C. Jungemann, C. Zimmermann","doi":"10.1109/SISPAD.2014.6931582","DOIUrl":null,"url":null,"abstract":"The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the framework of this model.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"DC, AC and noise simulation of organic semiconductor devices based on the master equation\",\"authors\":\"C. Jungemann, C. Zimmermann\",\"doi\":\"10.1109/SISPAD.2014.6931582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the framework of this model.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

有机半导体中的跳频输运产生了导纳和噪声的特征频率依赖关系，本文首次基于主方程方法对其进行了计算，其中噪声通过朗格万方法和修正的Ramo-Shockley定理进行了评估。在低频和低注入情况下，该模型框架内的非平衡噪声为射散噪声。

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DC, AC and noise simulation of organic semiconductor devices based on the master equation

The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the framework of this model.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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