提高高集成度、宽问题、基于微处理器的系统的内存带宽

D. Albonesi, I. Koren
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引用次数: 2

摘要

下一代宽问题处理器将需要比当前内存层次设计提供的更大的内存带宽。我们提出了增加多端口L1 d -缓存、大型片上L2缓存和专用内存端口的内存带宽的技术,同时最大限度地减少周期时间的影响。这些方法在8路超标量处理器设计和下一代VLSI、封装和RAM技术的背景下进行评估。我们表明,L1和L2缓存增强的组合性能可以比传统技术高出80%以上,并且即使使用片上512 kbyte的L2缓存,板级缓存也可以提供足够显著的性能提升,以证明其更高的成本是合理的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving the memory bandwidth of highly-integrated, wide-issue, microprocessor-based systems
Next-generation wide-issue processors will require greater memory bandwidth than provided by present memory hierarchy designs. We propose techniques for increasing the memory bandwidth of multi-ported L1 D-caches, large on-chip L2 caches and dedicated memory ports while minimizing the cycle time impact. These approaches are evaluated within the context of an 8-way superscalar processor design and next-generation VLSI, packaging and RAM technologies. We show that the combined L1 and L2 cache enhancements can outperform conventional techniques by over 80%, and that even with an on-chip 512-kByte L2 cache, board-level caches provide significant enough performance gains to justify their higher cost.
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