基于记忆电阻器的抗器件变化尖峰神经网络仿真

D. Querlioz, O. Bichler, C. Gamrat
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引用次数: 204

摘要

我们提出了一种设计方法来利用自适应纳米器件(忆阻器),几乎不受其可变性的影响。记忆电阻器在执行无监督学习的尖峰神经网络中用作突触。记忆电阻器通过适应脉冲时序相关的可塑性来学习。神经元的阈值是根据内稳态类型的规则调整的。在一个教科书案例上的系统级仿真表明,该算法的性能可以与相似复杂度的传统监督网络相媲美。他们还表明,由于该方案的鲁棒性、无监督性质和动态平衡的能力,该系统可以在各种忆阻器参数的极端变化下保持功能。此外,神经网络还能适应不同编码方案的刺激。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of a memristor-based spiking neural network immune to device variations
We propose a design methodology to exploit adaptive nanodevices (memristors), virtually immune to their variability. Memristors are used as synapses in a spiking neural network performing unsupervised learning. The memristors learn through an adaptation of spike timing dependent plasticity. Neurons' threshold is adjusted following a homeostasis-type rule. System level simulations on a textbook case show that performance can compare with traditional supervised networks of similar complexity. They also show the system can retain functionality with extreme variations of various memristors' parameters, thanks to the robustness of the scheme, its unsupervised nature, and the power of homeostasis. Additionally the network can adjust to stimuli presented with different coding schemes.
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