e波段,可扩展2×2相控阵收发器使用高隔离注入锁定振荡器在90nm SiGe BiCMOS

Najme Ebrahimi, M. Bagheri, Po-Yi Wu, J. Buckwalter
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引用次数: 8

摘要

本文提出了首个使用注入锁定振荡器(ILOs)进行波束形成的e波段相控阵收发器。我们提出了一种具有宽锁定范围和高隔离的电流注入配电网。演示了2×2双向收发器在71-86 GHz范围内工作,测量验证了每个振荡器可以独立控制,相移超过±300度,<;相位误差5°,振幅变化小于0.9 dB。每个通道在RX模式下具有9.5 db噪声系数,在TX模式下具有10 dbm输出功率。锁相振荡器的相位噪声在相位转向范围内的变化小于2.5 dB。90nm SiGe BiCMOS芯片在TX模式下每通道消耗386.4 mW,在RX模式下每通道消耗286 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An E-band, scalable 2×2 phased-array transceiver using high isolation injection locked oscillators in 90nm SiGe BiCMOS
This paper presents the first E-band phased array transceiver that uses injection locked oscillators (ILOs) for beamforming. We propose a current injection distribution network with wide locking range and high isolation. A 2×2 bidirectional transceiver is demonstrated to operate from 71-86 GHz and measurements verify that each oscillator can be controlled independently with phase shift over ±300 degrees with <; 5° phase error and under 0.9 dB amplitude variation. Each channel has a 9.5-dB noise figure in RX mode and a 10-dBm output power in TX mode. The phase noise of the locked oscillator exhibits less than 2.5 dB variation across the phase steering range. The 90-nm SiGe BiCMOS chip consumes 386.4 mW in TX mode and 286 mW in RX mode per channel.
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