应变层量子阱半导体光放大器:偏振不敏感放大

Optical Amplifiers and Their Applications Pub Date : 1991-10-01 DOI:10.1080/01468039108201716

M. Joma, H. Horikawa, M. Nakajima, M. Kawahara, T. Kamijoh

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引用次数: 8

摘要

在新开发的具有应变GaInAsP量子阱结构的半导体光放大器中证明了偏振不敏感的光放大。我们定制了四元应变层量子阱结构的活性区，在阱层中双轴拉伸应变很小，为0.2%，用于偏振不敏感操作。

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Strained Layer Quantum Well Semiconductor Optical Amplifiers: Polarization Insensitive Amplification

Polarization insensitive optical amplification was demonstrated in newly developed semiconductor optical amplifiers which have strained GaInAsP quantum well structures. We tailored the active region of the quaternary strained layer quantum well structure with small biaxially tensile strain of 0.2% in the well layers for polarization insensitive operation.

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Optical Amplifiers and Their Applications

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