介电基底电隔离对Mo/Si多层涂层结构和反射率影响的观察

G. Gutman, Richard A. Watts
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摘要

软x射线光学,特别是x射线光刻技术最重要的一般要求之一是长波长x射线在正入射时的高反射率。多层结构与沉积参数的依赖关系以及具有最佳光滑和尖锐界面的多层生长的适当条件的识别已经在其他地方报道了1,2,3,4。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Observation of Influence of Electrical Isolation of Dielectric Substrates on Structure and Reflectivity of Mo/Si Multilayer Coatings
One of the most important general reguirements for soft X-ray optics, and X-ray lithography in particular, is high reflectivity at normal incidence for long wavelength X-rays. Dependence of the multilayer structure on the deposition parameters and identification of appropriate conditions for the growth of multilayers having optimally smooth and sharp interfaces has been reported elsewhere1,2,3,4.
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