子vt系统的综合策略

P. Meinerzhagen, O. Andersson, Yasser Sherazi, A. Burg, J. Rodrigues
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引用次数: 12

摘要

为了最大限度地减少亚阈值(sub-VT)系统中每次操作的能量消耗,评估了依赖于传统标准单元库(SCLs)的各种合成策略。首先,回顾了两种亚vt分析方法,这两种方法都可以评估使用65纳米CMOS SCL合成的设计在亚vt状态下的能量消耗和性能,表征为标称电源电压。这两种分析方法都能够预测任何给定设计的能量最小供电电压(EMV)。接下来,使用重新表征的scl在EMV下进行亚vt合成的结果与初始合成结果进行比较。最后,将时域驱动合成的结果与功率驱动合成的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis strategies for sub-VT systems
Various synthesis strategies relying on conventional standard-cell libraries (SCLs) are evaluated in order to minimize the energy dissipation per operation in sub-threshold (sub-VT) systems. First, two sub-VT analysis methods are reviewed, both of which allow to evaluate the energy dissipation and performance in the sub-VT regime for designs which have been synthesized using a 65-nm CMOS SCL, characterized at nominal supply voltage. Both analysis methods are able to predict the energy minimum supply voltage (EMV) of any given design. Next, the results of a sub-VT synthesis at EMV using re-characterized SCLs are compared to the initial synthesis results. Finally, the results of timing-driven synthesis in both the above-VT and the sub-VT domain are compared to the results of power-driven synthesis.
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