{"title":"用于探针存储应用的悬臂/尖端系统的cmos兼容制造新方法","authors":"G. M. Lazzerini, S. Surdo, G. Barillaro","doi":"10.1109/RME.2009.5201353","DOIUrl":null,"url":null,"abstract":"In this work an original approach for the fabrication of the mechanical part of the Millipede, a MEMS-based scanning-probe data storage system, is reported. It allows the integration of both mechanical and electronic parts on the same wafer, by using CMOS-compatible processes. The proposed approach is based on the selective etching of p-type silicon, used as a sacrificial layer, with respect to n-type silicon, which is exploited as structural material (selective p-to-n electropolishing). Experimental results on chips fabricated by using the BCD6 process of STMicroelectronics demonstrate the feasibility of using this approach for the fabrication of freestanding n-type silicon cantilevers by selective etching of the ptype substrates.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new approach for CMOS-compatible fabrication of cantilever/tip systems for probe-storage applications\",\"authors\":\"G. M. Lazzerini, S. Surdo, G. Barillaro\",\"doi\":\"10.1109/RME.2009.5201353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work an original approach for the fabrication of the mechanical part of the Millipede, a MEMS-based scanning-probe data storage system, is reported. It allows the integration of both mechanical and electronic parts on the same wafer, by using CMOS-compatible processes. The proposed approach is based on the selective etching of p-type silicon, used as a sacrificial layer, with respect to n-type silicon, which is exploited as structural material (selective p-to-n electropolishing). Experimental results on chips fabricated by using the BCD6 process of STMicroelectronics demonstrate the feasibility of using this approach for the fabrication of freestanding n-type silicon cantilevers by selective etching of the ptype substrates.\",\"PeriodicalId\":245992,\"journal\":{\"name\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"2015 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2009.5201353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2009.5201353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new approach for CMOS-compatible fabrication of cantilever/tip systems for probe-storage applications
In this work an original approach for the fabrication of the mechanical part of the Millipede, a MEMS-based scanning-probe data storage system, is reported. It allows the integration of both mechanical and electronic parts on the same wafer, by using CMOS-compatible processes. The proposed approach is based on the selective etching of p-type silicon, used as a sacrificial layer, with respect to n-type silicon, which is exploited as structural material (selective p-to-n electropolishing). Experimental results on chips fabricated by using the BCD6 process of STMicroelectronics demonstrate the feasibility of using this approach for the fabrication of freestanding n-type silicon cantilevers by selective etching of the ptype substrates.