{"title":"用于探地雷达的雪崩晶体管短脉冲发生器试验","authors":"Aitykul Omurzakov, A. K. Keskin, A. S. Turk","doi":"10.1109/UWBUSIS.2016.7724188","DOIUrl":null,"url":null,"abstract":"This paper presents impulse generator for ground penetrating radar (GPR) transmitter based on multiplication effect of avalanche transistor. Different impulse generators are designed using single and multiple avalanche transistors. Circuits with multiple transistors used both serial and parallel connections of transistors. 100 kHz signal with 2.2 V and 3 ns pulse width was used as a trigger signal. 280 V DC bias voltage required for single and triple cascaded transistor circuit. Bias voltage for double and quadruple transistor circuit was 370 V DC. Maximum 150 V output with 1.5 ns pulse width was obtained. Circuit schematics and results are demonstrated.","PeriodicalId":423697,"journal":{"name":"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Avalanche transistor short pulse generator trials for GPR\",\"authors\":\"Aitykul Omurzakov, A. K. Keskin, A. S. Turk\",\"doi\":\"10.1109/UWBUSIS.2016.7724188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents impulse generator for ground penetrating radar (GPR) transmitter based on multiplication effect of avalanche transistor. Different impulse generators are designed using single and multiple avalanche transistors. Circuits with multiple transistors used both serial and parallel connections of transistors. 100 kHz signal with 2.2 V and 3 ns pulse width was used as a trigger signal. 280 V DC bias voltage required for single and triple cascaded transistor circuit. Bias voltage for double and quadruple transistor circuit was 370 V DC. Maximum 150 V output with 1.5 ns pulse width was obtained. Circuit schematics and results are demonstrated.\",\"PeriodicalId\":423697,\"journal\":{\"name\":\"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UWBUSIS.2016.7724188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UWBUSIS.2016.7724188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
介绍了一种基于雪崩晶体管倍增效应的探地雷达发射机脉冲发生器。不同的脉冲发生器设计使用单和多个雪崩晶体管。带有多个晶体管的电路使用晶体管的串行和并行连接。采用2.2 V、3ns脉宽的100khz信号作为触发信号。单级和三级级联晶体管电路需要280 V直流偏置电压。双晶体管和四晶体管电路的偏置电压为370 V DC。最大输出150v,脉宽1.5 ns。给出了电路原理图和结果。
Avalanche transistor short pulse generator trials for GPR
This paper presents impulse generator for ground penetrating radar (GPR) transmitter based on multiplication effect of avalanche transistor. Different impulse generators are designed using single and multiple avalanche transistors. Circuits with multiple transistors used both serial and parallel connections of transistors. 100 kHz signal with 2.2 V and 3 ns pulse width was used as a trigger signal. 280 V DC bias voltage required for single and triple cascaded transistor circuit. Bias voltage for double and quadruple transistor circuit was 370 V DC. Maximum 150 V output with 1.5 ns pulse width was obtained. Circuit schematics and results are demonstrated.