5位k波段MEMS移相器的设计、制造与封装

S. Bastioli, F. di Maggio, P. Farinelli, F. Giacomozzi, B. Margesin, A. Ocera, I. Pomona, M. Russo, R. Sorrentino
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引用次数: 7

摘要

本文介绍了一种新型的k波段5位MEMS移相器的设计、制造和封装,用于卫星移动通信终端。前4位是通过使用交换线路拓扑实现的,而不太重要的位由负载线路部分组成。该器件采用8掩模FBK MEMS工艺,在高电阻率硅衬底上采用微带技术制造。测量了MEMS开关以及构成移相器的单个比特的优异性能。移相器全波仿真在目标频段20.2 ~ 21.2 GHz范围内表现出良好的性能。在所有2^5移相器状态下,回波损耗和插入损耗分别大于17db和2db,相位误差小于2度。介绍了低成本封装方案的设计与制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design Manufacturing and Packaging of a 5-bit K-Band MEMS Phase Shifter
This work presents the design, manufacturing and packaging of a novel K-band 5-bit MEMS phase shifter for applications in Satellite COTM (Communication On The Move) Terminals. The first 4 bits are realized by using a switched line topology whereas the less significant bit consists of a loaded line section. The device has been manufactured in microstrip technology on high resistivity silicon substrate by using the 8-masks FBK MEMS process. Excellent performances were measured for the MEMS switches as well as the single bits constituting the phase shifter. The phase shifter full wave simulations show excellent performance in the frequency band of interest 20.2-21.2 GHz. Return loss and insertion loss better than 17 dB and 2 dB and phase error minor than 2 degrees are obtained for all the 2^5 phase shifter states. The design and manufacturing of the low cost packaging solution is also presented.
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