基于dtmos的温度传感器,在−20°C到85°C范围内误差为±0.25°C (3σ)

Rom Khanpeth, M. Kongpoon, A. Thanachayanont
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引用次数: 0

摘要

本文介绍了一种采用0.18 μm CMOS工艺的低功耗温度传感器的设计。所提出的温度传感器采用所谓的“动态阈值MOS (DTMOS)”二极管连接的晶体管作为温度传感器件。MOSFET阈值电压的过程扩展通过使用2晶体管(2T)基准电压来产生偏置电流源来补偿。电荷平衡delta-sigma $(\Delta \Sigma)$模数转换器(ADC)用于获得温度值的数字表示。DTMOS温度传感器核心和ADC在1v电源电压下工作。ADC工作频率为64khz,每次温度转换时间为32ms。经过单点温度修整和线性拟合后,该电路在所有工艺角的最大误差为±0.25°C (3σ),温度范围为- 20°C至85°C,功耗为8.1 μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A DTMOS-based temperature sensor with an inaccuracy of ±0.25°C (3σ) from −20°C to 85°C
This paper describes the design of a low-power temperature sensor in a 0.18-μm CMOS technology. The proposed temperature sensor employs the so-called “dynamic threshold MOS (DTMOS)" diode-connected transistors as the temperature sensing devices. Process spread of the MOSFET threshold voltage is compensated by using the 2-transistor (2T) voltage reference to generate the bias current sources. A charge-balancing delta-sigma $(\Delta \Sigma)$ analog-to-digital converter (ADC) is used to obtain the digital representation of temperature values. The DTMOS temperature sensor core and the ADC operate with 1 V power supply voltages. The ADC operates with a 64- kHz clock frequency and each temperature conversion time is 32ms. After a single-point temperature trimming and a linear fit, the proposed circuit achieves a maximum inaccuracy of ±0.25°C (3σ) across all process corners and the temperature range of −20°C to 85°C, while consuming 8.1 μW.
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