{"title":"基于dtmos的温度传感器,在−20°C到85°C范围内误差为±0.25°C (3σ)","authors":"Rom Khanpeth, M. Kongpoon, A. Thanachayanont","doi":"10.1109/ECTI-CON58255.2023.10153275","DOIUrl":null,"url":null,"abstract":"This paper describes the design of a low-power temperature sensor in a 0.18-μm CMOS technology. The proposed temperature sensor employs the so-called “dynamic threshold MOS (DTMOS)\" diode-connected transistors as the temperature sensing devices. Process spread of the MOSFET threshold voltage is compensated by using the 2-transistor (2T) voltage reference to generate the bias current sources. A charge-balancing delta-sigma $(\\Delta \\Sigma)$ analog-to-digital converter (ADC) is used to obtain the digital representation of temperature values. The DTMOS temperature sensor core and the ADC operate with 1 V power supply voltages. The ADC operates with a 64- kHz clock frequency and each temperature conversion time is 32ms. After a single-point temperature trimming and a linear fit, the proposed circuit achieves a maximum inaccuracy of ±0.25°C (3σ) across all process corners and the temperature range of −20°C to 85°C, while consuming 8.1 μW.","PeriodicalId":340768,"journal":{"name":"2023 20th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A DTMOS-based temperature sensor with an inaccuracy of ±0.25°C (3σ) from −20°C to 85°C\",\"authors\":\"Rom Khanpeth, M. Kongpoon, A. Thanachayanont\",\"doi\":\"10.1109/ECTI-CON58255.2023.10153275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design of a low-power temperature sensor in a 0.18-μm CMOS technology. The proposed temperature sensor employs the so-called “dynamic threshold MOS (DTMOS)\\\" diode-connected transistors as the temperature sensing devices. Process spread of the MOSFET threshold voltage is compensated by using the 2-transistor (2T) voltage reference to generate the bias current sources. A charge-balancing delta-sigma $(\\\\Delta \\\\Sigma)$ analog-to-digital converter (ADC) is used to obtain the digital representation of temperature values. The DTMOS temperature sensor core and the ADC operate with 1 V power supply voltages. The ADC operates with a 64- kHz clock frequency and each temperature conversion time is 32ms. After a single-point temperature trimming and a linear fit, the proposed circuit achieves a maximum inaccuracy of ±0.25°C (3σ) across all process corners and the temperature range of −20°C to 85°C, while consuming 8.1 μW.\",\"PeriodicalId\":340768,\"journal\":{\"name\":\"2023 20th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 20th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTI-CON58255.2023.10153275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 20th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTI-CON58255.2023.10153275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A DTMOS-based temperature sensor with an inaccuracy of ±0.25°C (3σ) from −20°C to 85°C
This paper describes the design of a low-power temperature sensor in a 0.18-μm CMOS technology. The proposed temperature sensor employs the so-called “dynamic threshold MOS (DTMOS)" diode-connected transistors as the temperature sensing devices. Process spread of the MOSFET threshold voltage is compensated by using the 2-transistor (2T) voltage reference to generate the bias current sources. A charge-balancing delta-sigma $(\Delta \Sigma)$ analog-to-digital converter (ADC) is used to obtain the digital representation of temperature values. The DTMOS temperature sensor core and the ADC operate with 1 V power supply voltages. The ADC operates with a 64- kHz clock frequency and each temperature conversion time is 32ms. After a single-point temperature trimming and a linear fit, the proposed circuit achieves a maximum inaccuracy of ±0.25°C (3σ) across all process corners and the temperature range of −20°C to 85°C, while consuming 8.1 μW.