{"title":"先进光刻用水性材料(会议报告)","authors":"Yi Cao, Tatsuro Nagahara, T. Hirayama","doi":"10.1117/12.2516031","DOIUrl":null,"url":null,"abstract":"EMD Performance Materials provides a broad material portfolio for photolithography, Chemical Shrink and EUV Rinse materials are two categories of aqueous materials enabling advanced patterning. \n\nChemical Shrink materials generate an additional layer on the surface of photoresist pattern through chemical/physical interactions, resulting in finer trench or hole structures. The technique helps IC manufacturers improve process margin and reduce cost of ownership by relaxing the requirements for lithography. EMD has been engaged in development of the technology for over two decades, and introduced materials for multiple generations of lithography. The first generation Chemical Shrink material, AZ® R200 was commercialized for i-line and KrF applications around 2000. From then on, several commercial platforms were released targeting for ArF, ArF-immersion, and ArF NTD (Negative Tone Development) photoresists. Shrink amount depends on the material platforms and photoresists, it can be controlled from several nm to 100 nm with the process conditions, mainly shrink bake temperature. Well-controlled through-pitch proximity is one of the key advantages of the technique as well. Chemical shrink process is a straightforward and well-established in-track process. Not only smaller pattern sizes are achieved, effective DOF (Depth of Focus) is improved, but also surface smoothing of photoresist is expected.\n\nRinse materials are a unique offering from EMD to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. Based on the knowledge and know-hows learned during the development of rinse materials for ArF and ArF immersion lithography processes in the past decades, new material platforms have been developed to extend the technique to meet the ever more critical requirements in EUV lithography. AZ® Extreme 10 was commercialized as the world first rinse material dedicated for EUV lithography, designed for L/S (Line and Space) pattern of 22nm hp patterning. To further improve the compatibility with the latest EUV photoresists for finer pattern, 18nm hp and beyond, AZ® SPC-708 is newly commercialized in 2018. It is expected that AZ® SPC-708 helps reduce photoresist residues during development process in addition to its function of collapse mitigation.\n\nEMD Performance Materials is committed to providing novel solutions to confront the increasing technical challenges in advanced patterning.","PeriodicalId":437977,"journal":{"name":"Advances in Patterning Materials and Processes XXXVI","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Aqueous materials for advanced lithography (Conference Presentation)\",\"authors\":\"Yi Cao, Tatsuro Nagahara, T. 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From then on, several commercial platforms were released targeting for ArF, ArF-immersion, and ArF NTD (Negative Tone Development) photoresists. Shrink amount depends on the material platforms and photoresists, it can be controlled from several nm to 100 nm with the process conditions, mainly shrink bake temperature. Well-controlled through-pitch proximity is one of the key advantages of the technique as well. Chemical shrink process is a straightforward and well-established in-track process. Not only smaller pattern sizes are achieved, effective DOF (Depth of Focus) is improved, but also surface smoothing of photoresist is expected.\\n\\nRinse materials are a unique offering from EMD to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. 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引用次数: 0
摘要
EMD高性能材料为光刻提供了广泛的材料组合,化学收缩和EUV冲洗材料是两类水性材料,可以实现先进的图案。化学收缩材料通过化学/物理相互作用在光刻胶图案表面产生额外的层,从而产生更精细的沟槽或孔结构。该技术通过放宽对光刻的要求,帮助IC制造商提高工艺利润并降低拥有成本。EMD从事光刻技术的开发已有二十多年,并推出了多代光刻材料。第一代化学收缩材料AZ®R200在2000年左右被商业化用于i-line和KrF应用。从那时起,几个针对ArF, ArF沉浸和ArF NTD(负色调显影)光刻胶的商业平台发布。收缩量取决于材料平台和光阻剂,它可以控制在几nm到100 nm的工艺条件下,主要是收缩烘烤温度。良好控制的全螺距接近度也是该技术的关键优势之一。化学收缩工艺是一种简单、成熟的工艺。不仅实现了更小的图案尺寸,提高了有效的焦深(DOF, Depth of Focus),而且光刻胶的表面平滑性也得到了提高。冲洗材料是EMD提供的独特产品,可以减轻毛细力,从而通过使用新型表面活性剂降低表面张力,减轻非常精细的光刻胶图案的图案崩溃。基于过去几十年在ArF和ArF浸没式光刻工艺的冲洗材料开发过程中所学到的知识和技能,新的材料平台已经开发出来,以扩展该技术,以满足EUV光刻中越来越关键的要求。AZ®Extreme 10是世界上第一个用于EUV光刻的冲洗材料,专为22nm hp图案的L/S(线和空间)图案而设计。为了进一步提高与最新EUV光刻胶的兼容性,以实现更精细的图案,18nm hp及更高,AZ®SPC-708于2018年首次商业化。预计AZ®SPC-708有助于减少光刻胶在开发过程中的残留,除了其功能的崩溃缓解。EMD高性能材料致力于提供新颖的解决方案,以应对日益增长的先进模式技术挑战。
Aqueous materials for advanced lithography (Conference Presentation)
EMD Performance Materials provides a broad material portfolio for photolithography, Chemical Shrink and EUV Rinse materials are two categories of aqueous materials enabling advanced patterning.
Chemical Shrink materials generate an additional layer on the surface of photoresist pattern through chemical/physical interactions, resulting in finer trench or hole structures. The technique helps IC manufacturers improve process margin and reduce cost of ownership by relaxing the requirements for lithography. EMD has been engaged in development of the technology for over two decades, and introduced materials for multiple generations of lithography. The first generation Chemical Shrink material, AZ® R200 was commercialized for i-line and KrF applications around 2000. From then on, several commercial platforms were released targeting for ArF, ArF-immersion, and ArF NTD (Negative Tone Development) photoresists. Shrink amount depends on the material platforms and photoresists, it can be controlled from several nm to 100 nm with the process conditions, mainly shrink bake temperature. Well-controlled through-pitch proximity is one of the key advantages of the technique as well. Chemical shrink process is a straightforward and well-established in-track process. Not only smaller pattern sizes are achieved, effective DOF (Depth of Focus) is improved, but also surface smoothing of photoresist is expected.
Rinse materials are a unique offering from EMD to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. Based on the knowledge and know-hows learned during the development of rinse materials for ArF and ArF immersion lithography processes in the past decades, new material platforms have been developed to extend the technique to meet the ever more critical requirements in EUV lithography. AZ® Extreme 10 was commercialized as the world first rinse material dedicated for EUV lithography, designed for L/S (Line and Space) pattern of 22nm hp patterning. To further improve the compatibility with the latest EUV photoresists for finer pattern, 18nm hp and beyond, AZ® SPC-708 is newly commercialized in 2018. It is expected that AZ® SPC-708 helps reduce photoresist residues during development process in addition to its function of collapse mitigation.
EMD Performance Materials is committed to providing novel solutions to confront the increasing technical challenges in advanced patterning.