一种基于边缘光刻的简易纳米线制造方法

Yaoping Liu, Wei Wang, H. Zhang, Wengang Wu, Zhihong Li
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引用次数: 1

摘要

本文开发了一种基于边缘光刻的4英寸晶圆级纳米制造方法,该方法定义了数百纳米尺寸的特征。制备了宽度约为600 nm的铝纳米线,晶圆级宽度不均匀性小于8.45%。铝纳米线在垂直堆叠硅纳米线和硅纳米线制备的深度反应离子刻蚀中起掩膜作用。所获得的纳米脊在PDMS微纳集成通道的成型中起着纳米主控的作用。该方法具有低成本、大批量生产的潜力,在微机电系统兼容微纳集成和纳米生物技术应用中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A facile nanowire fabrication approach based on edge lithography
This paper developed a facile nanofabrication approach at a 4-inch wafer level based on edge lithography defined hundreds nanometer-sized features. Aluminum nanowires with width around 600 nm were prepared and the wafer-level width non-uniformity was less than 8.45%. The aluminum nanowires functioned as masks in the deep reaction ion etching for vertically-stacked silicon nanowires and silicon nanoridge preparation. The obtained nanoridges acted as the nano-master in the molding of a PDMS micro/nano integrated channels. The proposed approach has the potential of nanofabricating with mass-production at effective cost, thereby holds promising future in MEMS (Microelectromechanical system) compatible micro/nano integration and nanobiotechnology applications.
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