R. Zuleeg, J. Notthoff, P. E. Friebertshauser, G. Troeger
{"title":"飞焦耳，高速平面GaAs E-JFET逻辑","authors":"R. Zuleeg, J. Notthoff, P. E. Friebertshauser, G. Troeger","doi":"10.1109/IEDM.1977.189204","DOIUrl":null,"url":null,"abstract":"Selective ion implantation was utilized to fabricate planar integrated circuits with GaAs enhancement-mode junction field-effect transistors (=E-JFET). A nine-stage ring oscillator was fabricated and served as a test vehicle for assessing the speed-power product for digital applications. Correlation of experimental results with theoretical predictions revealed femto-Joule switching characteristics of short-channel devices with LSI capability. The GaAs depletion-mode metal semiconductor field-effect transistor (=D-MESFET) logic gate performance and IC capability were compared with those of the E-JFET.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Femto-Joule, high-speed planar GaAs E-JFET logic\",\"authors\":\"R. Zuleeg, J. Notthoff, P. E. Friebertshauser, G. Troeger\",\"doi\":\"10.1109/IEDM.1977.189204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Selective ion implantation was utilized to fabricate planar integrated circuits with GaAs enhancement-mode junction field-effect transistors (=E-JFET). A nine-stage ring oscillator was fabricated and served as a test vehicle for assessing the speed-power product for digital applications. Correlation of experimental results with theoretical predictions revealed femto-Joule switching characteristics of short-channel devices with LSI capability. The GaAs depletion-mode metal semiconductor field-effect transistor (=D-MESFET) logic gate performance and IC capability were compared with those of the E-JFET.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selective ion implantation was utilized to fabricate planar integrated circuits with GaAs enhancement-mode junction field-effect transistors (=E-JFET). A nine-stage ring oscillator was fabricated and served as a test vehicle for assessing the speed-power product for digital applications. Correlation of experimental results with theoretical predictions revealed femto-Joule switching characteristics of short-channel devices with LSI capability. The GaAs depletion-mode metal semiconductor field-effect transistor (=D-MESFET) logic gate performance and IC capability were compared with those of the E-JFET.
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