{"title":"非相干量子传输的边界条件","authors":"M. Frey, A. Esposito, A. Schenk","doi":"10.1109/IWCE.2009.5091088","DOIUrl":null,"url":null,"abstract":"In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Boundary Conditions for Incoherent Quantum Transport\",\"authors\":\"M. Frey, A. Esposito, A. Schenk\",\"doi\":\"10.1109/IWCE.2009.5091088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Boundary Conditions for Incoherent Quantum Transport
In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.
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