电导率调制TFT的断流特性

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496333

K.P. Anish Kumar, J. Sin

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引用次数: 0

摘要

本文报道了多晶硅制备的电导率调制薄膜晶体管(CMTFT)的漏电流特性。晶体管在偏置区域使用电导率调制的思想，以获得导态电阻的显著降低。实验比较了CMTFT与传统偏置漏极器件的通断电流电压特性。该器件采用低温工艺(620/spl°C)制造，这对于大面积电子应用是非常理想的。

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Off-current characteristics of conductivity modulated TFT

This paper reports the leakage current characteristics of Conductivity Modulated Thin Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. The devices were fabricated using a low temperature process (620/spl deg/C) which is highly desirable for large area electronic applications.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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