基于65nm CMOS的k波段上转换混频器

2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM) Pub Date : 2021-11-28 DOI:10.1109/iwem53379.2021.9790411

Haipeng Duan, Xu Wu, Lianming Li, Dongming Wang

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引用次数: 0

摘要

本文提出了一种k波段上转换混频器，它由一个有源吉尔伯特混频器单元和一个射频缓冲器组成。该上转换混频器采用65nm CMOS技术制造，转换增益(CG)为12.8 dB，输出1-dB压缩点(OP1dB)为2.5 dBm，三阶输出截距点(OIP3)为14.7 dBm，同时在1.2 v电源电压下消耗31 mw直流功耗。

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A K-band Up-conversion Mixer in 65nm CMOS

This paper presents a K-band up-conversion mixer, which consists of an active Gilbert mixer cell and a radio frequency (RF) buffer. Fabricated in a 65nm CMOS technology, the up-conversion mixer achieves a conversion gain (CG) of 12.8 dB, an output 1-dB compression point (OP1dB) of 2.5 dBm and a third-order output intercept point (OIP3) of 14.7 dBm, while depleting a 31-mW DC power dissipation at a 1.2-V supply voltage.

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2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)

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