碳纳米管束与铜互连的性能比较及可变性分析

N. Alam, A. K. Kureshi, M. Hasan, T. Arslan
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引用次数: 8

摘要

碳纳米管束(CNT)具有取代片上铜(Cu)互连的潜力,因为它们具有较大的导电性和载流能力。相对于标准铜互连,分析工艺变化对碳纳米管束的影响对于预测基于碳纳米管互连的可靠性非常重要。本文研究了工艺变化对碳纳米管束电阻和电容的影响,并将其与32nm技术节点(2013年)的铜互连进行了比较。HSPICE仿真结果表明,在中间和全局互连中,碳纳米管束的功耗比Cu低1.5 ~ 2倍,速度比Cu快1.4 ~ 3倍。然而,对于本地互连,铜线优于碳纳米管束。除了局部互连外,工艺变化对碳纳米管束和铜丝的影响相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance comparison and variability analysis of CNT bundle and Cu interconnects
Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance and capacitance of CNT bundle and compare it with the Cu interconnects at the 32nm technology node (year 2013). HSPICE simulation results show that CNT bundle consumes 1.5 to 2 folds smaller power and are 1.4 to 3 times faster than Cu for Intermediate and Global interconnects. However, for local interconnect Cu wire outperforms the CNT bundle. It was observed that process variation has comparable effects for CNT bundle and Cu wire except for Local interconnects.
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