L. Bischoff, W. Pilz, T. Ganetsos, R. Forbes, C. Akhmadaliev
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GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research
In this work a Ga38Bi62 alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, was used to investigate the mechanism for the production of single and double-charged ions. Moreover, the intensity of cluster ions extracted by the source, as a function of emission current is represented. Theoretical modeling supports the experimental results
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