P. Stolk, P. Dirksen, C. Juffermans, R. Roes, A. Montree, J. van Wingerden, W.J.M. de Laat, Wendy F. Gehoel-van Ansem, M. Kaiser, J. Kwinten, C. van der Poel
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Using a novel phase-shift mask, 50 nm resolution has been achieved with conventional 248 nm lithography. The addition of so-called scattering bars enables within-die control of linewidths from 250 to 50 nm. Using 200 nm thick resist layers combined with hard mask processing, transistors with gate-lengths down to 50 nm have been fabricated. Well controlled device performance is achieved by optimizing offset spacers and pocket implants.
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